On the relationship between photoconductivity and light intensity in solidsSCHELLENBERG, J. J; KAO, K. C.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 12, pp 1764-1768, issn 0022-3727Article

Strong-excitation photoluminescence of PbBr₂.CH₃NH₂ crystalsALIEV, B. M; MAMEDOV, A. P; AZIZOV, A. G et al.Inorganic materials. 2001, Vol 37, Num 7, pp 752-753, issn 0020-1685Article

Excitonic photoluminescence spectra of C₆₀ single crystals grown by different techniquesCAPOZZI, V; SANTORO, M; PERNA, G et al.EPJ. Applied physics (Print). 2001, Vol 14, Num 1, pp 3-11, issn 1286-0042Article

Enhanced thermal dissociation of optically excited C₆₀ chainsPERSSON, P.-A; JACOBSSON, P; STAFSTRÖM, S et al.Europhysics letters (Print). 2000, Vol 49, Num 5, pp 631-636, issn 0295-5075Article

Experimental proof for naoparticle origin of photoluminescence in porous silicon layersKOOS, M; POCSIK, I; VAZSONYI, E. B et al.Applied physics letters. 1993, Vol 62, Num 15, pp 1797-1799, issn 0003-6951Article

Optical bistability of Frenkel-type excitonsNGUYEN BA AN.Acta physica Polonica. A. 1990, Vol 78, Num 4, pp 627-634, issn 0587-4246, 8 p.Article

Emission profile of Bk(III) in a silicate matrix : anomalous dependence on excitation powerASSEFA, Z; HAIRE, R. G; STUMP, N. A et al.Journal of alloys and compounds. 1998, Vol 271-73, pp 854-858, issn 0925-8388Conference Paper

Investigation of pulsed photoluminescence of a-Si:H subjected to intense picosecond excitationDANISHEVSKII, A. M; LATINIS, V; MEZDROGINA, M. M et al.Journal of experimental and theoretical physics (Print). 1993, Vol 77, Num 6, pp 944-949, issn 1063-7761Article

Fluorescence correlation spectroscopic study on water-soluble cadmium telluride nanocrystals : fast blinking dynamics in the μs-ms regionITO, Syoji; TOITANI, Naoki; LINGYUN PAN et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 48, pp 149-158, issn 0953-8984, 10 p.Article

Photocreated metastable state of organopolysilanesKONDO, M; MORIGAKI, K; TAKEDA, K et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 1267-1270, issn 0022-3093, 2Conference Paper

D'étonnantes peintures sensibles a la pression = Amazing pressure-sensitive paintsTechnologies France (Strasbourg). 1998, Num 47, pp 18-19, issn 1257-2489Article

Luminescence centers in porous siliconCHEAH, K. W; HO, L. C; XIA, J. B et al.Applied physics. A, Materials science & processing (Print). 1995, Vol 60, Num 6, pp 601-606, issn 0947-8396Article

Photoconductivity in relaxation case semiconductorsDROZHOV, YU. P.Physica status solidi. A. Applied research. 1987, Vol 100, Num 2, pp K155-K158, issn 0031-8965Article

Frequency-resolved photocurrent studies of a-SeKAPLAN, R.Applied physics. A, Materials science & processing (Print). 1997, Vol 64, Num 2, pp 171-175, issn 0947-8396Article

Light-induced degradation on porous siliconCHANG, I. M; PAN, S. C; CHEN, Y. F et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 12, pp 8747-8750, issn 0163-1829Article

Optical excitations near the fundamental gap of solid C₆₀FELDMANN, J; FISCHER, R; GÖBEL, E. O et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 1, pp 339-344, issn 0370-1972Conference Paper

Resonance fluorescence of a two-level atom in a strong bichromatic fieldFREEDHOFF, H; CHEN, Z.Physical review. A, General physics. 1990, Vol 41, Num 11, pp 6013-6022, issn 0556-2791, 10 p.Article

Temperature and excitation power dependencies of the photoluminescence of planar and vertically self-organized Si_0.70Ge_0.30/Si strained superlatticesBOZZO, S; LAZZARI, J.-L; BREMOND, G et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 130-133, issn 0040-6090Conference Paper

An effective and simple oxygen nanosensor made from MPA-capped water soluble CdTe nanocrystalsCHUNG LAU, Pick; NORWOOD, Robert A; MANSURIPUR, Masud et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 1, issn 0957-4484, 015501.1-015501.8Article

Electronic acceleration of atomic motions and disordering in bismuthSCIAINI, German; HARB, Maher; KRUGLIK, Sergei G et al.Nature (London). 2009, Vol 458, Num 7234, pp 56-59, issn 0028-0836, 4 p.Article

Non-perturbative optical response of a single quantum dot in a fluctuating environmentJANKOVIC, A; FERREIRA, R; BASTARD, G et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S11-S13, issn 0268-1242Conference Paper

Analysis of changes in the intensity of the intrinsic luminescence after the copper diffusion into semi-insulating undoped GaAs crystalsGLINCHUK, K. D; PROKHOROVICH, A. V; VOROBKALO, F. M et al.Crystal research and technology (1979). 1998, Vol 33, Num 5, pp 833-839, issn 0232-1300Article

Luminescence from Si_1-xGe_x/Si quantum wells grown by Si molecular-beam epitaxyFUKATSU, S; USAMI, N; SHIRAKI, Y et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 895-898, issn 1071-1023Conference Paper

Strong-field ionization in classical and quantum dynamicsRITCHIE, B; BOWDEN, C. M; SUNG, C. C et al.Physical review. A, General physics. 1990, Vol 41, Num 11, pp 6114-6118, issn 0556-2791, 5 p.Article

Time dynamics of free- and bound-exciton luminescence in CdSe under low- and high-intensity excitationGOURDON, C; LAVALLARD, P; DAGENAIS, M et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2589-2593, issn 0163-1829Article